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TSM180N03PQ33 RGG


TSM180N03PQ33 RGG

Part NumberTSM180N03PQ33 RGG

Manufacturer

Description

Datasheet

Package / Case8-PowerWDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TSM180N03PQ33 RGG - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerTaiwan Semiconductor Corporation
Series-
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs18mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.1nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds345pF @ 25V
FET Feature-
Power Dissipation (Max)21W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PDFN (3x3)
Package / Case8-PowerWDFN

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