TSM180N03PQ33 RGG
TSM180N03PQ33 RGG
Part Number TSM180N03PQ33 RGG
Description MOSFET N-CH 30V 25A 8PDFN
Package / Case 8-PowerWDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 30V 25A (Tc) 21W (Tc) Surface Mount 8-PDFN (3x3)
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TSM180N03PQ33 RGG - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM180N03PQ33
Standard Package 1
Manufacturer Taiwan Semiconductor Corporation
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 345pF @ 25V
FET Feature -
Power Dissipation (Max) 21W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (3x3)
Package / Case 8-PowerWDFN
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